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| LL4148 SMALL SIGNAL SWITCHING DIODE FEATURES Silicon epitaxial planar diode High speed switching diode 500mW power dissipation REVERSE VOLTAGE - 75 Volts FORWARD CURRENT - 0.15Amperes DL - 35 .063(1.6) .055(1.4) .020(0.5) .012(0.3) .020(0.5) .012(0.3) MECHANICAL DATA Case: Mini-MELF glass case Polarity: Color band denotes cathode Weight : Approx.0.05 grams .146(3.7) .130(3.3) Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 ambient temperature unless otherwise specified. MAXIMUM RATINGS LL4148 Reverse Vltage Peak Reverse Voltage Average Forward Rectified Current Half Wave Rectification with Resist .load at Tamb=25 and f50HZ Forward Surge Current at t1s and TJ=25 Power Dissipation at Tamb=25 Junction Temperature Storage Temperature Range IFSM Ptot TJ TSTG IO VR VRM UNIT V V 75 100 150 500 500 (1) mA mA mW 175 65 to175 NOTE:(1) Valid provided that electrodes are kept at ambient temperature . ELECTRICAL CHARACTERISTICS MIN Forward Voltage at IF=10mA Leakage Current at VR=20V at VR=75V at VR=20V TJ=150 Capacitance at VF=VR=0V Voltage Rise When Switching ON Tested With 50mA Pulses tp=0.1us.Rise Time<30ns.fp=5to 100HZ Reverse Recovery Time From IF=10mA VR=6V. RL=100 at IR=1mA Thermal Resistance Junction to Ambient Rectification Effciency at 100MHZ VRF=2V RJA TYP - MAX 1 25 5 50 4 2.5 UNIT V uA uA uA pF v VF IR IR IR Ctot Vfr trr 0.45 4 350(1) ns K/W V NOTE:(1)Valid provided that electrodes are kept at ambient temperature. ~ 416 ~ RATING AND CHARACTERISTIC CURVES LL4148 mW 1000 900 800 700 600 500 400 300 200 100 0 FLG.1-ADMISSIBLE POWER DISSIPATION VERSUS AMBIENT TEMPERATURE 103 FIG.2-FORWARD CHARACTERISTICS 102 TJ = 100C I F Ptot 10 TJ = 25C 1 10-1 10-2 0 150 TA 200 0 1 2V VF A 100 FLG.3-ADMISSIBLE REPETITVE PEAK FORWARD CURRENT VERSUS PULSE DURATION IFRM 10 tp V=tp/T T=1/fp IFRM 1 T 0.1 10-5 10-3 10-2 10-1 1 10S tp ~ 417 ~ RATING AND CHARACTERISTIC CURVES LL4148 FIG.4-RECTIFICATION EFFICIENCY MEASUREMENT CIRCUIT FIG.5-RELATIVE CAPACITANCE VERSUS VOLTAGE 1.1 D.U.T 60 VRF=2V VO Ctot(VR) Ctot(0V) TJ = 25C f = 1 MHz 1.0 = 2nF 5K 0.9 0.8 0.7 0 2 4 6 8 VR 10V FIG.6-LEAKAGE CURRENT VERSUS nA 10 4 FIG.7-DYNAMIC FORWARD RESISTANCE VERSUS FORWARD CURRENT 10 4 JUNCTION TEMPERATURE IR 10 3 rF 10 3 10 2 10 2 10 10 1 0 100 Tj IF 200 1 10 -2 -1 10 1 10 10 2 m ~ 418 ~ |
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